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16/2012 : Supply Voltage Dependent On-chip Single Event Transient Pulse Shape Measurements in 90 nm Bulk CMOS under Alpha Irradiation

RR Number
16/2012
Conference
Proceedings 21st European Conference on Radiation and its Effects on Components and Systems (RADECS)
Author(s)
Michael Hofbauer, Kurt Schweiger, Horst Zimmermann, Ulrich Giesen, Frank Langner, Ulrich Schmid, Andreas Steininger
Abstract
Direct on-chip pulse shape measurements of single event transients (SETs) in a single inverter in 90 nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB) in Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights and widths could be observed.
Bibtex
@inproceedings{HSZG12:RADECS,
  author =       "Michael Hofbauer and Kurt Schweiger and Horst Zimmermann and Ulrich Giesen and Frank Langner and Ulrich Schmid and Andreas Steininger",
  title =        "Supply Voltage Dependent On-chip Single Event Transient Pulse Shape Measurements in 90 nm Bulk {CMOS} under Alpha Irradiation",
  booktitle =      "Proceedings 21st European Conference on Radiation and its Effects on Components and Systems (RADECS'12)",
  year =         "2012",
  month =        "Sep."
  location = "Biarritz (Pays Basque), France",
  note = {(to appear)},
}
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