[ main page ] [ back ]

28/2012 : Supply Voltage Dependent On-chip Single Event Transient Pulse Shape Measurements in 90 nm Bulk CMOS under Alpha Irradiation

RR Number
28/2012
Comment
(submitted to IEEE Transactions on Nuclear Science)
Author(s)
Michael Hofbauer, Kurt Schweiger, Horst Zimmermann, Ulrich Giesen, Frank Langner, Ulrich Schmid, Andreas Steininger
Abstract
Direct on-chip pulse shape measurements of single event transients (SETs) in a single inverter in 90 nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB) in Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights and widths could be observed.
Bibtex
@techreport{HSZG12:ToNS,
  author =       "Michael Hofbauer and Kurt Schweiger and Horst Zimmermann and Ulrich Giesen and Frank Langner and Ulrich Schmid and Andreas Steininger",
  title =        "Supply Voltage Dependent On-chip Single Event Transient Pulse Shape Measurements in 90 nm Bulk CMOS under Alpha Irradiation",
  institution =  "Technische Universit{\"a}t Wien, Institut f{\"u}r Technische Informatik",
  address =      "Treitlstr. 1-3/182-1, 1040 Vienna, Austria",
  type =         "Research Report",
  year =         "2012",
  number =       "28/2012"
}
Download

[ main page ] [ back ]